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G Skill Intl F3-17000CL9-4GBXLD 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分
star star star star star
G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异 规格 评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB 需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 32
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 11.0
    测试中的平均数值
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-17000CL9-4GBXLD 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 32
  • 读取速度，GB/s
    16.0 left arrow 15.7
  • 写入速度，GB/s
    11.1 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 2528

G Skill Intl F3-17000CL9-4GBXLD 4GB RAM的比较

G Skill Intl F3-17000CL11-4GBXL 4GB
Kingston KHX16LC9/8GX 8GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB RAM的比较

SK Hynix HMT41GS6BFR8A-PB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-4000C17-16GVKB 16GB
G Skill Intl F4-4000C17-16GVKB 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2800C16-8GVR 8GB
G Skill Intl F4-2800C16-8GVR 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Transcend Information JM3200HLE-32GK 16GB
Transcend Information JM3200HLE-32GK 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Hewlett-Packard 7TE39AA#ABC 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-8GVK 8GB
G Skill Intl F4-3200C16-8GVK 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965604-016.C01G 8GB
Kingston 9965604-016.C01G 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Corsair CMK16GX4M4B3600C18 4GB
Corsair CMK16GX4M4B3600C18 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C17-8GVK 8GB
G Skill Intl F4-3600C17-8GVK 8GB
内存RAM