G Skill Intl F3-1866C8-8GTX 8GB vs Crucial Technology CT8G4SFS824A.C8FE 8GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 32

左右 3% 更低的延时
更快的读取速度，GB/s

16.8 15.1

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FE 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 32
读取速度，GB/s

16.8 15.1
写入速度，GB/s

10.8 10.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2904 2667

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology BLS8G4D26BFSE.16FE 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Chun Well Technology Holding Limited D4U0836144B 8GB

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Kingston KVR533D2N4 512MB

Corsair CMD32GX4M2B3466C16 16GB

Corsair CMD32GX4M2B3466C16 16GB