G Skill Intl F3-1866C8-8GTX 8GB vs Gloway International (HK) STK4U2400D17041C 4GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 71

左右 56% 更低的延时
更快的读取速度，GB/s

16.8 15.8

测试中的平均数值
更快的写入速度，GB/s

10.8 7.9

测试中的平均数值

Gloway International (HK) STK4U2400D17041C 4GB

需要考虑的原因
Gloway International (HK) STK4U2400D17041C 4GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

Gloway International (HK) STK4U2400D17041C 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 71
读取速度，GB/s

16.8 15.8
写入速度，GB/s

10.8 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2904 1757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M391B5673EH1-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB

Samsung M378A2K43DB1-CVF 16GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB