G Skill Intl F3-1866C8-8GTX 8GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 47% 更低的延时
更快的写入速度，GB/s

10.8 9.5

测试中的平均数值

Samsung V-GeN D4S4GL32A8TL 4GB

需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB

报告一个错误

更快的读取速度，GB/s

18.5 16.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

Samsung V-GeN D4S4GL32A8TL 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 58
读取速度，GB/s

16.8 18.5
写入速度，GB/s

10.8 9.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2904 1998

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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SK Hynix HMA82GU6CJR8N-VK 16GB

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Kingston 99U5471-020.A00LF 4GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD32GX4M4A2400C14 8GB

Corsair CMD32GX4M4A2400C14 8GB