G Skill Intl F3-2133C9-4GAB 4GB vs Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

更快的读取速度，GB/s

16.4 15.3

测试中的平均数值

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时
更快的写入速度，GB/s

11.5 11.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 24
读取速度，GB/s

16.4 15.3
写入速度，GB/s

11.0 11.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2729 2744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 9965662-016.A00G 16GB

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Crucial Technology BLS4G4D240FSC.8FBD 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB

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Kingston 9905403-156.A00LF 2GB

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A-DATA Technology DDR3 1333G 2GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMA81GU6AFR8N-UH 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB