G Skill Intl F3-2133C9-4GAB 4GB vs Crucial Technology CT4G4DFS8213.C8FAD1 4GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

更快的读取速度，GB/s

16.4 11.9

测试中的平均数值
更快的写入速度，GB/s

11.0 10.0

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAD1 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 36

左右 -20% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 30
读取速度，GB/s

16.4 11.9
写入速度，GB/s

11.0 10.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2729 2475

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-3000C15-8GTZR 8GB

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Kingston KVR800D2N6/2G 2GB

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Hyundai Inc GR26C16S8K2HU416 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology CT4G4DFS8213.C8FAD1 4GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMR64GX4M8C3000C15 8GB

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Team Group Inc. Vulcan-1600 4GB

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SK Hynix HMA82GU7AFR8N-UH 16GB

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Kingston 9905316-106.A02LF 1GB

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Kingston 9905403-038.A00LF 4GB

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Corsair CM4X8GD3000C16K4D 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

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Samsung M393B5170FH0-CK0 4GB

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Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C14-16GTZSW 16GB

G Skill Intl F4-3200C14-16GTZSW 16GB

Samsung M378B5773CH0-CH9 2GB

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A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB