G Skill Intl F3-2133C9-4GAB 4GB vs Crucial Technology CT8G4DFS8213.M8FB 8GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

更快的读取速度，GB/s

16.4 15.2

测试中的平均数值
更快的写入速度，GB/s

11.0 10.1

测试中的平均数值

Crucial Technology CT8G4DFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 36

左右 -16% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 31
读取速度，GB/s

16.4 15.2
写入速度，GB/s

11.0 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2729 2712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Kingston 99U5471-012.A00 4GB

Kingston 99U5471-012.A00 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK16GX4M2Z2400C16 8GB

Corsair CMK16GX4M2Z2400C16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Smart Modular SF4641G8CK8IEGKSBG 8GB

Smart Modular SF4641G8CK8IEGKSBG 8GB

Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB