G Skill Intl F3-2133C9-4GAB 4GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 5% 更低的延时
更快的读取速度，GB/s

16.4 14.7

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2E1 8GB

报告一个错误

更快的写入速度，GB/s

12.4 11.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 38
读取速度，GB/s

16.4 14.7
写入速度，GB/s

11.0 12.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2729 2908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905701-018.A00G 16GB

Kingston 9905701-018.A00G 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Apacer Technology 76.D105G.D090B 16GB

Apacer Technology 76.D105G.D090B 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

Kingston 9905630-066.A00G 16GB

Kingston 9905630-066.A00G 16GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9965662-009.A00G 16GB

Kingston 9965662-009.A00G 16GB

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600