G Skill Intl F3-2400C11-8GSR 8GB vs Crucial Technology BLS8G4D240FSE.M16FAD 8GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13

测试中的平均数值
更快的写入速度，GB/s

11.3 8.6

测试中的平均数值

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 34

左右 -6% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 32
读取速度，GB/s

16.8 13.0
写入速度，GB/s

11.3 8.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 2243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CMK8GX4M2B3200C16 4GB

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A-DATA Technology AD73I1B1672EG 2GB

Samsung M471A2K43CB1-CRCR 16GB

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Peak Electronics 256X64M-67E 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-2666C15-4GRR 4GB

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Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 9905701-004.A00G 16GB

Kingston 9905701-004.A00G 16GB

Kingston FQ453-80003 1GB

Kingston FQ453-80003 1GB

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Samsung M378B5173BH0-CH9 4GB

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V-Color Technology Inc. TL48G32S8KSRGB16 8GB