G Skill Intl F3-2400C11-8GSR 8GB vs SK Hynix HMA41GU6AFR8N-TF 8GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 36

左右 6% 更低的延时
更快的读取速度，GB/s

16.8 15.3

测试中的平均数值
更快的写入速度，GB/s

11.3 11.1

测试中的平均数值

SK Hynix HMA41GU6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GU6AFR8N-TF 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 36
读取速度，GB/s

16.8 15.3
写入速度，GB/s

11.3 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2968 2696

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378A1G43DB0-CPB 8GB

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G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

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Patriot Memory (PDP Systems) PSD48G240081 8GB

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Kingston 99U5403-036.A00G 4GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Hewlett-Packard 7EH74AA#ABC 8GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

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G Skill Intl F4-3200C22-32GRS 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB