G Skill Intl F3-2666C12-8GTXD 8GB vs Corsair CM4X8GF3000C15K4 8GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Corsair CM4X8GF3000C15K4 8GB

Corsair CM4X8GF3000C15K4 8GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

Corsair CM4X8GF3000C15K4 8GB

需要考虑的原因
Corsair CM4X8GF3000C15K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 28

左右 -33% 更低的延时
更快的读取速度，GB/s

18.6 18.2

测试中的平均数值
更快的写入速度，GB/s

13.6 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CM4X8GF3000C15K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 21
读取速度，GB/s

18.2 18.6
写入速度，GB/s

11.5 13.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3067 3243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M378A1G43DB0-CPB 8GB

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Samsung M393B1G70BH0-CK0 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Corsair CM4B8G7L2666A16K2-O 8GB

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Samsung M471A5143SB1-CRC 4GB

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Crucial Technology 8G4US2400.M8B1 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Samsung M471A1K43CB1-CRC 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB