G Skill Intl F3-2666C12-8GTXD 8GB vs Kingston 9905734-063.A00G 32GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Kingston 9905734-063.A00G 32GB

Kingston 9905734-063.A00G 32GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Kingston 9905734-063.A00G 32GB

需要考虑的原因
Kingston 9905734-063.A00G 32GB

报告一个错误

更快的读取速度，GB/s

18.6 18.2

测试中的平均数值
更快的写入速度，GB/s

16.5 11.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston 9905734-063.A00G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

18.2 18.6
写入速度，GB/s

11.5 16.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3067 3740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 18ASF1G72PDZ-2G1A1 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Corsair CMH32GX4M4E3200C16 8GB

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Samsung M378B5173BH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited D4U0836181B 8GB

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Samsung M378B5173BH0-CH9 4GB

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Mushkin MR[A/B]4U320LLLM16G 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2400C16-16GRS 16GB

G Skill Intl F4-2400C16-16GRS 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Corsair CM4X8GE2400C14K4 8GB

Corsair CM4X8GE2400C14K4 8GB