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G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16G2666CL19 16GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Micron Technology 16G2666CL19 16GB

总分
star star star star star
G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分
star star star star star
Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

差异 规格 评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB 需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.2
    测试中的平均数值
Micron Technology 16G2666CL19 16GB 需要考虑的原因
Micron Technology 16G2666CL19 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 -17% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16G2666CL19 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 24
  • 读取速度，GB/s
    18.2 left arrow 15.4
  • 写入速度，GB/s
    11.5 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3067 left arrow 2438

G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB

Micron Technology 16G2666CL19 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston CBD24D4S7D8MB-16 16GB
Kingston CBD24D4S7D8MB-16 16GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
Kingston K531R8-ETB 4GB
Kingston K531R8-ETB 4GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Apacer Technology GD2.1542WS.003 8GB
Apacer Technology GD2.1542WS.003 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK16GX4M2B3600C18 8GB
Corsair CMK16GX4M2B3600C18 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMD8GX4M2B3200C16 4GB
Corsair CMD8GX4M2B3200C16 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
内存RAM