G Skill Intl F3-2800C12-8GTXDG 8GB vs Corsair CMD128GX4M8B3200C16 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Corsair CMD128GX4M8B3200C16 16GB

Corsair CMD128GX4M8B3200C16 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 31

左右 32% 更低的延时
更快的读取速度，GB/s

17.4 12.2

测试中的平均数值
更快的写入速度，GB/s

12.2 12.1

测试中的平均数值

Corsair CMD128GX4M8B3200C16 16GB

需要考虑的原因
Corsair CMD128GX4M8B3200C16 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMD128GX4M8B3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 31
读取速度，GB/s

17.4 12.2
写入速度，GB/s

12.2 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2869

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.CAGRN.40C0B 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMT64GX4M8C3200C16 8GB

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Crucial Technology CT16G4SFD824A.M16FB 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

Samsung M391A1G43EB1-CRC 8GB

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Hewlett-Packard 7EH98AA#ABB 8GB

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Samsung M471B5173DB0-YK0 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB