G Skill Intl F3-2800C12-8GTXDG 8GB vs Corsair CMD32GX4M4C3200C14T 8GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 34

左右 38% 更低的延时
更快的读取速度，GB/s

17.4 15.5

测试中的平均数值

Corsair CMD32GX4M4C3200C14T 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C14T 8GB

报告一个错误

更快的写入速度，GB/s

14.9 12.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMD32GX4M4C3200C14T 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 34
读取速度，GB/s

17.4 15.5
写入速度，GB/s

12.2 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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PNY Electronics PNY 2GB

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Kingmax Semiconductor GLAG43F-18---------- 8GB

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Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingston MSI24D4S7S8MB-8 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Kingston KHX3200C18D4/8G 8GB

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB