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G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Crucial Technology BLS16G4D26BFSB.16FD 16GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 28
    左右 25% 更低的延时
Crucial Technology BLS16G4D26BFSB.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.1 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 12.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 28
  • 读取速度，GB/s
    17.4 left arrow 18.1
  • 写入速度，GB/s
    12.2 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 3534

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM
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Corsair CMY16GX3M4A2133C8 4GB
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Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM