G Skill Intl F3-2800C12-8GTXDG 8GB vs Kingston KHX2400C14S4/16G 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Kingston KHX2400C14S4/16G 16GB

Kingston KHX2400C14S4/16G 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 35

左右 40% 更低的延时
更快的读取速度，GB/s

17.4 15.2

测试中的平均数值

Kingston KHX2400C14S4/16G 16GB

需要考虑的原因
Kingston KHX2400C14S4/16G 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston KHX2400C14S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 35
读取速度，GB/s

17.4 15.2
写入速度，GB/s

12.2 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3130 2815

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-5600J4040C16G 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

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G Skill Intl F4-2400C15-8GNT 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M471A1K1KCB1-CRC 8GB