G Skill Intl F3-2800C12-8GTXDG 8GB vs Micron Technology 8ATF2G64HZ-3G2B2 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 46

左右 54% 更低的延时
更快的读取速度，GB/s

17.4 15.9

测试中的平均数值
更快的写入速度，GB/s

12.2 9.8

测试中的平均数值

Micron Technology 8ATF2G64HZ-3G2B2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2B2 16GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 46
读取速度，GB/s

17.4 15.9
写入速度，GB/s

12.2 9.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3130 2632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS824A.M8FH 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB

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Crucial Technology BLM8G40C18U4B.M8FE1 8GB

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Kingston HP32D4U2S8MR-8 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB