G Skill Intl F3-2800C12-8GTXDG 8GB vs Mushkin 99[2/7/4]204F 4GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 16% 更低的延时
更快的读取速度，GB/s

17.4 13.4

测试中的平均数值
更快的写入速度，GB/s

12.2 11.5

测试中的平均数值

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 25
读取速度，GB/s

17.4 13.4
写入速度，GB/s

12.2 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G36C16U4BL.M8FB1 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston 9905713-035.A00G 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Mushkin 99[2/7/4]204F 4GB

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Samsung M393A1G40DB0-B`B 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-3200C16-16GTZR 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Ramsta Ramsta-2400Mhz-4G 4GB

Ramsta Ramsta-2400Mhz-4G 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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takeMS International AG TMS2GB264D081-805U 2GB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB