G Skill Intl F3-2800C12-8GTXDG 8GB vs SK Hynix HMA82GR8AMR4N-TF 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 37

左右 43% 更低的延时
更快的读取速度，GB/s

17.4 10.4

测试中的平均数值
更快的写入速度，GB/s

12.2 7.9

测试中的平均数值

SK Hynix HMA82GR8AMR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR8AMR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

SK Hynix HMA82GR8AMR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 37
读取速度，GB/s

17.4 10.4
写入速度，GB/s

12.2 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-2800C12-8GTXDG 8GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMV4GX3M1B1600C11 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston ACR32D4S2S8ME-16 16GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

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Corsair CMK32GX4M4D3200C16 8GB

Corsair CMK32GX4M4D3200C16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Crucial Technology BLS8G4D26BFSTK.8FD 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB