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G Skill Intl F4-3600C16-8GTZKK 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

G Skill Intl F4-3600C16-8GTZKK 8GB vs Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

总分
star star star star star
G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

差异 规格 评论

差异

G Skill Intl F4-3600C16-8GTZKK 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTZKK 8GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 18.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 16.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
G Skill Intl F4-3600C16-8GTZKK 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 26
  • 读取速度，GB/s
    18.6 left arrow 18.7
  • 写入速度，GB/s
    16.6 left arrow 16.8
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3938 left arrow 3937

G Skill Intl F4-3600C16-8GTZKK 8GB RAM的比较

Kingston 9965640-016.A00G 32GB
Crucial Technology CT8G4DFS824A.C8FE 8GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3333C16-16GVR 16GB
G Skill Intl F4-3333C16-16GVR 16GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Heoriady HX2666DT8G-TD 8GB
Heoriady HX2666DT8G-TD 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CM3X1G1600C9 1GB
Corsair CM3X1G1600C9 1GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM