G Skill Intl F4-4000C14-16GTZR 16GB vs Corsair CMD16GX4M2K4133C19 8GB

总分

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

差异规格评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

24 19.9

测试中的平均数值
更快的写入速度，GB/s

20.0 18.0

测试中的平均数值

Corsair CMD16GX4M2K4133C19 8GB

需要考虑的原因
Corsair CMD16GX4M2K4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 29

左右 -53% 更低的延时

规格

完整的技术规格清单

G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMD16GX4M2K4133C19 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 19
读取速度，GB/s

24.0 19.9
写入速度，GB/s

20.0 18.0
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

4156 3691

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-3000C16-16GTZR 16GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Kingston 9905744-006.A00G 16GB

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Corsair CMW128GX4M8C3000C16 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Corsair CMU32GX4M4C3400C16 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Gloway International (HK) STKD4GAM2133-F 8GB

Gloway International (HK) STKD4GAM2133-F 8GB