G Skill Intl F4-4000C14-16GTZR 16GB vs Corsair CMK8GX4M2B4266C19 4GB

总分

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分

Corsair CMK8GX4M2B4266C19 4GB

Corsair CMK8GX4M2B4266C19 4GB

差异规格评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

24 20.9

测试中的平均数值
更快的写入速度，GB/s

20.0 16.7

测试中的平均数值

Corsair CMK8GX4M2B4266C19 4GB

需要考虑的原因
Corsair CMK8GX4M2B4266C19 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 29

左右 -61% 更低的延时

规格

完整的技术规格清单

G Skill Intl F4-4000C14-16GTZR 16GB

Corsair CMK8GX4M2B4266C19 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 18
读取速度，GB/s

24.0 20.9
写入速度，GB/s

20.0 16.7
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

4156 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 991586 2GB

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Kingston 99U5428-046.A00LF 4GB

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Smart Modular SF4641G8CKHI6DFSDS 8GB

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Samsung M393A2K40CB1-CRC 16GB

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Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT8G4SFRA32A.M8FRS 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Kingston 9905403-061.A00LF 2GB

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Kingston ACR32D4U2S8HD-8X 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB