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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
比较
G Skill Intl F4-4000C14-16GTZR 16GB vs Crucial Technology BLS4G4D240FSB.M8FBD 4GB
总分
G Skill Intl F4-4000C14-16GTZR 16GB
总分
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
更快的读取速度,GB/s
24
17.6
测试中的平均数值
更快的写入速度,GB/s
20.0
12.9
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
29
左右 -32% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
22
读取速度,GB/s
24.0
17.6
写入速度,GB/s
20.0
12.9
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
4156
2728
G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Patriot Memory (PDP Systems) PSD432G32002S 32GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Ramaxel Technology RMT3170EB68F9W1600 4GB
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SK Hynix HMT41GU7MFR8A-H9 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW32GX4M2Z3200C16 16GB
PNY Electronics PNY 2GB
Apacer Technology 78.C1GMW.AUC0B 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Samsung M393A1G40DB0-B`B 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2400C14-4GRK 4GB
报告一个错误
×
Bug description
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