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G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Crucial Technology CT8G4SFS832A.C8FE 8GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 48
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    24 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 13.4
    测试中的平均数值
Crucial Technology CT8G4SFS832A.C8FE 8GB 需要考虑的原因
Crucial Technology CT8G4SFS832A.C8FE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 48
  • 读取速度，GB/s
    24.0 left arrow 16.8
  • 写入速度，GB/s
    20.0 left arrow 13.4
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 2852

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Crucial Technology CT8G4SFS832A.C8FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Apacer Technology GD2.1140CH.001 4GB
Apacer Technology GD2.1140CH.001 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM