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G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

总分
star star star star star
G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

差异 规格 评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    24 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    20.0 left arrow 8.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 38
  • 读取速度，GB/s
    24.0 left arrow 9.4
  • 写入速度，GB/s
    20.0 left arrow 8.3
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    4156 left arrow 2110

G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMK32GX4M4D3200C16 8GB
Corsair CMK32GX4M4D3200C16 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Avant Technology W644GU44J2320NH 32GB
Avant Technology W644GU44J2320NH 32GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Corsair CMK32GX4M4B3333C16 8GB
Corsair CMK32GX4M4B3333C16 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMK8GX4M1E3200C16 8GB
Corsair CMK8GX4M1E3200C16 8GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM