G Skill Intl F4-4000C14-16GTZR 16GB vs SK Hynix HMA851U6CJR6N-UH 4GB

总分

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

总分

SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

差异规格评论

差异

G Skill Intl F4-4000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 22% 更低的延时
更快的读取速度，GB/s

24 15.6

测试中的平均数值
更快的写入速度，GB/s

20.0 12.0

测试中的平均数值

SK Hynix HMA851U6CJR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851U6CJR6N-UH 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

G Skill Intl F4-4000C14-16GTZR 16GB

SK Hynix HMA851U6CJR6N-UH 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 37
读取速度，GB/s

24.0 15.6
写入速度，GB/s

20.0 12.0
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

4156 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Wilk Elektronik S.A. GR2666D464L19/16G 16GB

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Kingston 9905403-011.A03LF 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

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G Skill Intl F4-3000C16-16GTZR 16GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB