G Skill Intl F4-4000C19-16GTZR 16GB vs G Skill Intl F4-4000C18-16GTRG 16GB

总分

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

总分

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

差异规格评论

差异

G Skill Intl F4-4000C19-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时
更快的写入速度，GB/s

17.9 16.9

测试中的平均数值

G Skill Intl F4-4000C18-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRG 16GB

报告一个错误

更快的读取速度，GB/s

19.7 18.8

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

18.8 19.7
写入速度，GB/s

17.9 16.9
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

4053 3700

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMT325U6CFR8C-PB 2GB

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Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB