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G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F5-6000J3636F16G 16GB vs G Skill Intl F4-2400C15-8GRR 8GB

总分
star star star star star
G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

总分
star star star star star
G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F4-2400C15-8GRR 8GB

差异 规格 评论

差异

G Skill Intl F5-6000J3636F16G 16GB 需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 35
    左右 37% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-2400C15-8GRR 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GRR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 14.4
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-2400C15-8GRR 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 35
  • 读取速度，GB/s
    14.4 left arrow 15.5
  • 写入速度，GB/s
    13.4 left arrow 11.5
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3671 left arrow 2923

G Skill Intl F5-6000J3636F16G 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB

G Skill Intl F4-2400C15-8GRR 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2666C15-16GVK 16GB
G Skill Intl F4-2666C15-16GVK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4U9S8HJ-8 8GB
Kingston ACR26D4U9S8HJ-8 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Corsair CMK128GX4M8X3800C19 16GB
Corsair CMK128GX4M8X3800C19 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
Asgard VMA45UG-MEC1U2BQ2 8GB
Asgard VMA45UG-MEC1U2BQ2 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD16GX4M2B2800C14 8GB
Corsair CMD16GX4M2B2800C14 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2800C16-8GRK 8GB
G Skill Intl F4-2800C16-8GRK 8GB
内存RAM