G Skill Intl F5-6000J3636F16G 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

总分

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

差异规格评论

差异

G Skill Intl F5-6000J3636F16G 16GB

需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 22

左右 -22% 更低的延时
更快的读取速度，GB/s

20.5 14.4

测试中的平均数值
更快的写入速度，GB/s

16.2 13.4

测试中的平均数值

规格

完整的技术规格清单

G Skill Intl F5-6000J3636F16G 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

22 18
读取速度，GB/s

14.4 20.5
写入速度，GB/s

13.4 16.2
内存带宽，mbps

19200 19200

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

no data / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3671 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-16GIS 16GB

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Crucial Technology CT4G4DFS824A.M8FF 4GB

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Samsung M471B5273DH0-CK0 4GB

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Crucial Technology BL8G30C15U4B.8FE 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Corsair CMD16GX4M4B3000C15 4GB

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Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

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Corsair CML8GX3M2A1600C9 4GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB