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G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB

G Skill Intl F5-6400J3239G16G 16GB vs Micron Technology 9ASF51272PZ-2G1A2 4GB

总分
star star star star star
G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

差异 规格 评论

差异

G Skill Intl F5-6400J3239G16G 16GB 需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 43
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Micron Technology 9ASF51272PZ-2G1A2 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1A2 4GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 43
  • 读取速度，GB/s
    17.8 left arrow 11.4
  • 写入速度，GB/s
    15.7 left arrow 9.5
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3867 left arrow 2532

G Skill Intl F5-6400J3239G16G 16GB RAM的比较

Corsair CMK16GX4M2K4266C16 8GB
Kingston 9905783-025.A01G 16GB

Micron Technology 9ASF51272PZ-2G1A2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
内存RAM
Samsung M378B2873FH0-CH9 1GB
Samsung M378B2873FH0-CH9 1GB
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston HP26D4S9S8MHF-8 8GB
Kingston HP26D4S9S8MHF-8 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
内存RAM
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Kingston KHX2933C17S4/8G 8GB
Kingston KHX2933C17S4/8G 8GB
内存RAM