G Skill Intl F5-6400J3239G16G 16GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

总分

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

差异规格评论

差异

G Skill Intl F5-6400J3239G16G 16GB

需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

报告一个错误

更快的读取速度，GB/s

19.7 17.8

测试中的平均数值
更快的写入速度，GB/s

17.0 15.7

测试中的平均数值

规格

完整的技术规格清单

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

17.8 19.7
写入速度，GB/s

15.7 17.0
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3867 3842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Avant Technology F641GU67F9333G 8GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

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SK Hynix HMAA4GS6CJR8N-XN 32GB

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Samsung M378T5663QZ3-CF7 2GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Kingston FQ453-80003 1GB

Kingston FQ453-80003 1GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston HP26D4S9S1ME-4 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB