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G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43EB1-CWE 16GB
比较
G Skill Intl F5-6400J3239G16G 16GB vs Samsung M471A2K43EB1-CWE 16GB
总分
G Skill Intl F5-6400J3239G16G 16GB
总分
Samsung M471A2K43EB1-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
55
左右 53% 更低的延时
更快的读取速度,GB/s
17.8
15.8
测试中的平均数值
更快的写入速度,GB/s
15.7
13.8
测试中的平均数值
需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43EB1-CWE 16GB
主要特点
存储器类型
DDR5
DDR4
PassMark中的延时,ns
26
55
读取速度,GB/s
17.8
15.8
写入速度,GB/s
15.7
13.8
内存带宽,mbps
19200
25600
Other
描述
PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
no data / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
3867
2701
G Skill Intl F5-6400J3239G16G 16GB RAM的比较
Corsair CMK16GX4M2K4266C16 8GB
Kingston 9905783-025.A01G 16GB
Samsung M471A2K43EB1-CWE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation R748G2133U2S 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Ramaxel Technology RMUA5200MR78HAF-3200 8GB
Kingston 99U5403-492.A00LF 8GB
Samsung M378A1K43DB2-CTD 8GB
Kingston 99U5584-001.A00LF 4GB
Samsung M471A1A43CB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2E4333C19 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 2133 2OZ 8GB
Kingston KF552C40-16 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
A-DATA Technology DDR3 1600 4GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M471A1K43CBCBCRC 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston KTD3KX-MIB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD832A.M16FJ 16GB
报告一个错误
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Bug description
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