Golden Empire 1GB DDR2 800 CAS=4 1GB vs A-DATA Technology AO1P24HCST2-BSCS 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.6

测试中的平均数值

A-DATA Technology AO1P24HCST2-BSCS 16GB

需要考虑的原因
A-DATA Technology AO1P24HCST2-BSCS 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 28
读取速度，GB/s

4,577.1 17.0
写入速度，GB/s

2,066.5 13.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 3027

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMD64GX4M4C3200C16 16GB

Corsair CMD64GX4M4C3200C16 16GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK64GX4M2A2666C16 32GB

Corsair CMK64GX4M2A2666C16 32GB