Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology BL8G32C16S4B.8FE 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.2

测试中的平均数值

Crucial Technology BL8G32C16S4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16S4B.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 49

左右 -20% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BL8G32C16S4B.8FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 41
读取速度，GB/s

4,577.1 16.1
写入速度，GB/s

2,066.5 13.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

737 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA81GS6MFR8N-UH 8GB

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G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Corsair CMW64GX4M4C3200C16 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-3200C16-8GTRG 8GB