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Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology BLE4G4D26AFEA.8FADG 4GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Crucial Technology BLE4G4D26AFEA.8FADG 4GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 12.4
    测试中的平均数值
Crucial Technology BLE4G4D26AFEA.8FADG 4GB 需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 49
    左右 -58% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 31
  • 读取速度，GB/s
    4,577.1 left arrow 16.4
  • 写入速度，GB/s
    2,066.5 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3042

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Crucial Technology BLE4G4D26AFEA.8FADG 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
G Skill Intl F4-3466C18-8GTZRXB 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX2133C14D4/8G 8GB
Kingston KHX2133C14D4/8G 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston ASU21D4U5S1MB-4 4GB
Kingston ASU21D4U5S1MB-4 4GB
内存RAM
Kingston 99U5315-023.A00LF 512MB
Kingston 99U5315-023.A00LF 512MB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM