Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology CB8GU2400.C8JT 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

低于PassMark测试中的延时，ns

49 71

左右 31% 更低的延时
更快的读取速度，GB/s

4 16

测试中的平均数值

Crucial Technology CB8GU2400.C8JT 8GB

需要考虑的原因
Crucial Technology CB8GU2400.C8JT 8GB

报告一个错误

更快的写入速度，GB/s

8.6 2,066.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CB8GU2400.C8JT 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 71
读取速度，GB/s

4,577.1 16.0
写入速度，GB/s

2,066.5 8.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 1956

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW128GX4M8C3200C16 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Samsung M391B5273CH0-CH9 4GB

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Kingston MSI24D4S7D8MB-8 8GB

Kingston MSI24D4S7D8MB-8 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Team Group Inc. 16GB

Team Group Inc. 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

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Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

G Skill Intl F4-2800C15-8GTXG 8GB