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Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT4G4SFS824A.M8FB 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology CT4G4SFS824A.M8FB 4GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 11.4
    测试中的平均数值
Crucial Technology CT4G4SFS824A.M8FB 4GB 需要考虑的原因
Crucial Technology CT4G4SFS824A.M8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 -96% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 25
  • 读取速度，GB/s
    4,577.1 left arrow 15.1
  • 写入速度，GB/s
    2,066.5 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2240

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Crucial Technology CT4G4SFS824A.M8FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M4B3600C18 8GB
Corsair CMK32GX4M4B3600C18 8GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
Crucial Technology BL8G30C15U4R.8FE 8GB
Crucial Technology BL8G30C15U4R.8FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMSX16GX4M2A3000C16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMW128GX4M4E3200C16 32GB
Corsair CMW128GX4M4E3200C16 32GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
G Skill Intl F4-3600C14-8GTZRA 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK32GX4M4C3000C16 8GB
Corsair CMK32GX4M4C3000C16 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905712-008.A00G 16GB
Kingston 9905712-008.A00G 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
内存RAM