RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4400C18-8GTZR 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-4400C18-8GTZR 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-4400C18-8GTZR 8GB

G Skill Intl F4-4400C18-8GTZR 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-4400C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4400C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 49
    左右 -133% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4400C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 21
  • 读取速度，GB/s
    4,577.1 left arrow 20.1
  • 写入速度，GB/s
    2,066.5 left arrow 19.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 4089

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-4400C18-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston MSI24D4S7S8MH-8 8GB
Kingston MSI24D4S7S8MH-8 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F4-2400C17-8GNT 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CM4X8GF2666Z16K4 8GB
Corsair CM4X8GF2666Z16K4 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston SNY1333D3S9ELC/4G 4GB
Kingston SNY1333D3S9ELC/4G 4GB
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
内存RAM
Kingston MSI24D4S7D8MB-16 16GB
Kingston MSI24D4S7D8MB-16 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM