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Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 49
    左右 -69% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 29
  • 读取速度，GB/s
    4,577.1 left arrow 13.6
  • 写入速度，GB/s
    2,066.5 left arrow 9.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2419

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
内存RAM
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
内存RAM
Kingston 9905403-170.A00LF 2GB
Kingston 9905403-170.A00LF 2GB
Corsair CMD32GX4M4C3200C14T 8GB
Corsair CMD32GX4M4C3200C14T 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M391A1G43DB0-CPB 8GB
Samsung M391A1G43DB0-CPB 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3333C16-16GTZSW 16GB
G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston 9965698-001.A00G 16GB
Kingston 9965698-001.A00G 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM