Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston 9965669-019.A00G 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 11.6

测试中的平均数值

Kingston 9965669-019.A00G 16GB

需要考虑的原因
Kingston 9965669-019.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的写入速度，GB/s

8.5 2,066.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9965669-019.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

4,577.1 11.6
写入速度，GB/s

2,066.5 8.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 2517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D26BFSB.8FE 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Avant Technology J642GU42J5213N4 16GB

Avant Technology J642GU42J5213N4 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMD16GX4M4B3600C18 4GB

Corsair CMD16GX4M4B3600C18 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB