Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston 99U5702-101.A00G 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Kingston 99U5702-101.A00G 8GB

Kingston 99U5702-101.A00G 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Kingston 99U5702-101.A00G 8GB

需要考虑的原因
Kingston 99U5702-101.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的写入速度，GB/s

9.1 2,066.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 99U5702-101.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

4,577.1 13.7
写入速度，GB/s

2,066.5 9.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

737 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C16-8GTZR 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9905663-030.A00G 16GB

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Kingston 99U5458-005.A01LF 4GB

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PNY Electronics PNY 2GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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Mushkin 99[2/7/4]190F 4GB

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Kingston 9905471-001.A01LF 2GB

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Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

Crucial Technology BL8G32C16S4B.M8FE 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Corsair CM4X16GE2400C16K4 16GB

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Samsung M471B5173QH0-YK0 4GB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB