Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston CBD24D4S7S8ME-8 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.1

测试中的平均数值

Kingston CBD24D4S7S8ME-8 8GB

需要考虑的原因
Kingston CBD24D4S7S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston CBD24D4S7S8ME-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

4,577.1 15.1
写入速度，GB/s

2,066.5 13.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 2638

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

AMD R5316G1609U2K 8GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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G Skill Intl F3-2400C10-8GTX 8GB

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Samsung M378A5244CB0-CRC 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

Team Group Inc. TEAMGROUP-UD4-3600 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Kingston 9905702-120.A00G 8GB

Kingston 9905702-120.A00G 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Samsung M391A1K43BB1-CRC 8GB

Samsung M391A1K43BB1-CRC 8GB

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB