Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值
更快的写入速度，GB/s

2,066.5 11.9

测试中的平均数值

Micron Technology 16ATF4G64HZ-3G2E2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB

报告一个错误

低于PassMark测试中的延时，ns

43 49

左右 -14% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 43
读取速度，GB/s

4,577.1 15.5
写入速度，GB/s

2,066.5 11.9
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

737 2864

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Teikon TMA851S6AFR6N-UHHC 4GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston 9905471-006.A01LF 4GB

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

Kingston KHX1866C9D3/8GX 8GB

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AMD R5316G1609U2K 8GB

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Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB