Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.4

测试中的平均数值

Micron Technology 8ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

4,577.1 17.0
写入速度，GB/s

2,066.5 13.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

737 2936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-2133C9-4GAB 4GB

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Corsair CMD16GX4M4B3200C16 4GB

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Kingston 99U5584-004.A00LF 4GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Kingston XRMWRN-MIE2 16GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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G Skill Intl F4-3600C16-8GTZSW 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Samsung M393A4K40CB2-CTD 32GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 9905711-017.A00G 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMD16GX4M4A2800C16 4GB

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Kingston 9905403-515.A00LF 8GB

Kingston 9905700-026.A00G 8GB

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