Golden Empire 1GB DDR2 800 CAS=4 1GB vs SK Hynix HMA82GU6CJR8N-XN 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,066.5 12.6

测试中的平均数值

SK Hynix HMA82GU6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GU6CJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 49

左右 -58% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMA82GU6CJR8N-XN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 31
读取速度，GB/s

4,577.1 17.2
写入速度，GB/s

2,066.5 12.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

737 3256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Apacer Technology 78.CAGP7.4020B 8GB

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Nanya Technology M2F4G64CB8HB9N-CG 4GB

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Samsung M378A2K43EB1-CWE 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Golden Empire CL16-18-18 D4-3000 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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Kingston 99U5428-018.A00LF 8GB

Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB