Golden Empire 1GB DDR2 800 CAS=4 1GB vs Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,066.5 14.7

测试中的平均数值

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 49

左右 -58% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 31
读取速度，GB/s

4,577.1 17.9
写入速度，GB/s

2,066.5 14.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 3444

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F4-3200C14-16GTZKW 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CML8GX3M2A1600C9 4GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB