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Golden Empire CL5-5-5DDR2 1GB
G Skill Intl F4-3600C17-16GTZ 16GB

Golden Empire CL5-5-5DDR2 1GB vs G Skill Intl F4-3600C17-16GTZ 16GB

总分
star star star star star
Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

差异 规格 评论

差异

Golden Empire CL5-5-5DDR2 1GB 需要考虑的原因
Golden Empire CL5-5-5DDR2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,001.7 left arrow 16.5
    测试中的平均数值
G Skill Intl F4-3600C17-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 45
    左右 -61% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Golden Empire CL5-5-5DDR2 1GB
G Skill Intl F4-3600C17-16GTZ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 28
  • 读取速度，GB/s
    4,776.5 left arrow 18.0
  • 写入速度，GB/s
    2,001.7 left arrow 16.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    669 left arrow 3741

Golden Empire CL5-5-5DDR2 1GB RAM的比较

A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB

G Skill Intl F4-3600C17-16GTZ 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3000C15-4GTZB 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F4-3200C16-32GTZN 32GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-2400C15-8GRB 8GB
G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
Golden Empire CL5-5-5DDR2 1GB
G Skill Intl F4-3600C17-16GTZ 16GB
G Skill Intl F4-3600C17-16GTZ 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix HMA82GU6DJR8N-WM 16GB
SK Hynix HMA82GU6DJR8N-WM 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM