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Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.B1GM3.C7W0B 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Apacer Technology 78.B1GM3.C7W0B 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16
    测试中的平均数值
Apacer Technology 78.B1GM3.C7W0B 4GB 需要考虑的原因
Apacer Technology 78.B1GM3.C7W0B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 62
    左右 -158% 更低的延时
  • 更快的写入速度，GB/s
    11.4 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.B1GM3.C7W0B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 24
  • 读取速度，GB/s
    3,556.6 left arrow 16.0
  • 写入速度，GB/s
    1,843.6 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2280

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
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Crucial Technology CT51264BA1339.D16F 4GB
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Samsung M378A2G43MB1-CTD 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
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G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
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Kingston HX316C10F/8 8GB
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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Samsung M378A5244CB0-CTD 4GB
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AMD AE34G2139U2 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Samsung M378A2G43MB1-CTD 16GB
内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Samsung M378A5244BB0-CRC 4GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2400C16-16GFX 16GB
G Skill Intl F4-2400C16-16GFX 16GB
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