Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMD128GX4M8B2800C14 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMD128GX4M8B2800C14 16GB

Corsair CMD128GX4M8B2800C14 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Corsair CMD128GX4M8B2800C14 16GB

需要考虑的原因
Corsair CMD128GX4M8B2800C14 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 62

左右 -130% 更低的延时
更快的写入速度，GB/s

10.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD128GX4M8B2800C14 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 27
读取速度，GB/s

3,556.6 14.8
写入速度，GB/s

1,843.6 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4BU008G-H3200ULH 8GB

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AMD R538G1601U2S-UO 8GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

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Gloway International (HK) STK2133C15-8GB 8GB

Gloway International (HK) STK2133C15-8GB 8GB

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Kingston 99U5474-037.A00LF 4GB

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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N